KLA-Tencor Launches Two Tools to Help IC Makers Accelerate New Technology Transitions

In an effort to help integrated circuit (IC) manufacturers accelerate the development of sub-0.18-µm technologies and copper interconnect processes, KLA-Tencor Corp. unveiled the eS20 inspection system for in-line wafer monitoring and the CuPMC process control solution for copper interconnects.

According to the San Jose, CA-based company, the eS20 in-line scanning e-beam inspection tool for sub-0.18-µm and copper devices represents a breakthrough in both speed and performance and is the first scanning e-beam inspection system optimized for use in full-volume production.

As a result, it can provide the vital link that integrated circuit (IC) manufacturers need to develop comprehensive in-line monitoring strategies that leverage both e-beam and optical inspection technologies -- enabling the detection of all yield-killing defect types at all critical layers at the high speeds needed for true production monitoring.

By enabling the rapid detection of emerging yield-limiting defect types, the eS20 can help IC manufacturers revolutionize their inspection strategies to accelerate the development, transfer and ramp of sub-0.18-µm technologies and copper interconnect processes.

To optimize the use of the eS20 within a fab's inspection scheme, KLA-Tencor also offers its proprietary Sample Planner software. This new product generates a statistically-valid, customized, fab-wide inspection strategy designed to help IC manufacturers determine the ideal combination of e-beam and optical inspection for their specific in-line monitoring requirements.

According to Robert Cappel, director of marketing for KLA-Tencor's E-Beam Inspection Division, the eS20 is the latest in a series of e-beam products from KLA-Tencor that are enabling "the dawn of e-beam line monitoring" -- a paradigm shift from current semiconductor manufacturing inspection strategies.

"The advent of new materials such as copper, new processes such as dual damascene and rapidly shrinking design rules necessitates a sampling strategy that combines e-beam and optical approaches to reliably detect all yield-limiting defects," Cappel says. He adds that the eS20 complements KLA-Tencor optical inspection technologies in detecting new emerging defect types in today's new copper interconnect processes. "These new defect types include sub-design rule particles and patterning defects, defects in very high aspect ratio structures and electrical defects such as voids," Cappel explains.

When using optical inspection tools alone, certain yield-critical defect types associated with sub-0.18-µm devices and copper processes may go undetected until final yield testing -- slowing yield learning, delaying time to market, and placing the final product at risk. According to KLA-Tencor, the eS20, which combines the speed required for in-line monitoring with the ability to detect these yield-killing defects, is up to 75 times faster than any other commercially available e-beam inspection tool.

Used primarily for post-CMP and post-etch monitoring, the eS20 is not limited by resolution, color, grain or pattern noise, all of which degrade the detection capabilities of other inspection techniques. The eS20 is also a 200/300 mm bridge tool, providing fabs with added flexibility and greatly increasing the extendibility of the tool. In addition to its ability to inspect memory devices, the eS20 is the only e-beam system available that can perform the die-to-die comparison necessary for inspecting logic devices, providing excellent electrical test to defect data correlation.

Most of the eS20's performance features -- including throughput enhancements -- are available as field upgrades for existing KLA-Tencor e-beam inspection systems.

In addition to its use for traditional aluminum device shrinks below 0.18 µm, the eS20 is the cornerstone of KLA-Tencor's new copper interconnect process module control solution -- the CuPMC.

Comprised of defect-reduction tools and parametric control systems, as well as classification/analysis software and solutions engineering expertise, KLA-Tencor's CuPMC technology enables control over the critical process parameters that drive copper manufacturing success. This includes optimizing the lithography, deposition, etch and chemical mechanical planarization (CMP) process modules needed to create copper devices. Leveraging this solution, semiconductor manufacturers can speed technology development, optimize equipment characterization and accelerate the ramp to copper yield entitlement.

"The copper technology transition presents a serious challenge to semiconductor manufacturers," notes Tom Long, KLA-Tencor's VP of corporate marketing. "Copper damascene structures, for instance, require the integration of new materials such as copper and low-k dielectrics, as well as new processes such as multi-level dielectric etching, copper seed/barrier layers, electrofilling high aspect ratio trenches and vias, and copper CMP."

Long explains that all of these new processes and materials create new inspection challenges and defect types that can seriously impact yield. "Our CuPMC solution is designed to help our customers successfully overcome these integration challenges to rapidly achieve maximum yield in the development of their copper processes," he says.

At the heart of the CuPMC solution lies an integrated defect reduction and process parametric control system. Integrating optical and electron-beam-based inspection technology with comprehensive defect classification software, advanced SEM review tools and automated yield analysis systems, KLA-Tencor's defect reduction solution finds, filters and identifies yield-limiting signatures and sources quickly and automatically.

Visit KLA-Tencor's Booth No. 426 at the Moscone Center in San Francisco, during SEMICON West 99 from July 12-14, to learn more about these technologies.